國家衛生研究院 NHRI:Item 3990099045/15168
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    题名: Mercury ion sensing using aptamer-modified extended gate field-effect transistors and a handheld device
    作者: Lee, CT;Paulose, AK;Kuo, TH;Zeng, GC;Lin, CK;Cheng, YY;Lin, ZH;Chen, JC;Dong, GC;Li, BR;Hung, SC;Wang, YL
    贡献者: Institute of Biomedical Engineering and Nanomedicine
    摘要: In this research, we have designed, fabricated, and characterized an Electrical double-layer (EDL) gated FET platform to detect heavy metals. The electrical double layer (EDL)-gated field-effect transistor-based sensor is garnering interest due to its sensitivity, portable configuration, selectivity, inexpensive operation, as well as their user-friendly nature. the sensing platform designed for rapid detection of Hg2+ using DNA-based aptamers. The investigation was carried out by introducing different concentrations of Mercury ions and a lower detection limit of 1 & mu;M was achieved. The sensor surface was validated with Kelvin Probe Force Microscope (KPFM), which is consistent with the electrical response obtained. Sensor selectivity was studied and exhibited a high sensitivity toward Mercury ion detection. Considering its limit of detection, compatibility, and fast turnaround; the proposed system has the potential to be used to detect Mercury ions instantly for environmental monitoring, where quick and accurate detection of Mercury ions is essential.
    日期: 2023-07-20
    關聯: ECS Journal of Solid State Science and Technology. 2023 Jul 20;12:Article number 077005.
    Link to: http://dx.doi.org/10.1149/2162-8777/ace0d9
    JIF/Ranking 2023: http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=NHRI&SrcApp=NHRI_IR&KeyISSN=2162-8769&DestApp=IC2JCR
    Cited Times(WOS): https://www.webofscience.com/wos/woscc/full-record/WOS:001029825100001
    Cited Times(Scopus): https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=85165681492
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